Micron Technology has officially broken ground on a major expansion of its Hiroshima manufacturing site in western Japan, marking a significant step in the company’s long-term strategy to expand advanced memory output for AI-driven workloads.
The project represents a total investment of approximately ¥1.5 trillion (around $9.3–9.6 billion) and will significantly increase production capacity for next-generation DRAM and high-bandwidth memory (HBM), both of which are critical components in AI accelerators used by leading data center and GPU platforms.
Focus on 1γ DRAM and HBM Scaling
At the core of the expansion is Micron’s push to scale 1γ (1-gamma) DRAM technology, an advanced process node designed to improve density and performance for AI and high-performance computing applications. The new facility will also support expanded production of HBM products, which are increasingly constrained by surging demand from AI training and inference workloads.
The Hiroshima site is already a key global DRAM manufacturing hub for Micron, and the expansion is intended to further strengthen its role as a leading-edge production center for next-generation memory technologies.
Construction Timeline and Equipment Ramp
According to the project schedule, construction will proceed in phases, with equipment installation expected in the second half of 2028 (2H28). This timeline aligns with the anticipated ramp of advanced AI chips requiring next-generation HBM capacity.
Commercial output is expected to begin around 2028, positioning the facility to support the next wave of AI server and accelerator deployments.
Government Support and Strategic Importance
Japan’s Ministry of Economy, Trade and Industry (METI) is expected to provide up to ¥500 billion in subsidies to support the expansion, continuing Japan’s broader strategy to strengthen domestic semiconductor manufacturing capabilities and attract strategic foreign investment.
The Hiroshima expansion also reflects a broader geopolitical and industrial trend: diversifying advanced memory production outside of concentrated manufacturing regions while reinforcing supply chains for AI infrastructure.
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Part of a Global Capacity Expansion Wave
Micron’s Hiroshima investment is part of a wider global capital expenditure push across the memory industry, as companies race to address structural shortages in HBM and advanced DRAM. With AI workloads driving unprecedented demand, leading memory suppliers are rapidly expanding capacity to avoid long-term supply bottlenecks.
Once operational, the expanded Hiroshima fab is expected to play a central role in Micron’s roadmap for next-generation memory technologies, particularly as the industry transitions toward more advanced AI architectures requiring higher bandwidth and efficiency.
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